Experimental study on deep levels and heterojunctions of Ⅲ-Ⅴ compound semiconductors by the junction capacitance method

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Experimental study on deep levels and heterojunctions of Ⅲ-Ⅴ compound semiconductors by the junction capacitance method

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Material Type: 博士論文
Title: Experimental study on deep levels and heterojunctions of Ⅲ-Ⅴ compound semiconductors by the junction capacitance method
Author/Editor: 渡邉美代子 [著]
Author Heading: 渡邉, 美代子ワタナベ, ミヨコ
Alternative Title: 接合容量法によるⅢ-Ⅴ族化合物半導体の深い準位と、ヘテロ接合に関する実験的研究セツゴウヨウリョウホウニヨル 3 - 5ゾクカゴウブツハンドウタイノフカイジュンイトヘテロセツゴウニカンスルジッケンテキケンキュウ
Degree grantor/type: 東京理科大学
Date Granted: 昭和61年9月30日
Date Granted (W3CDTF): 1986
Dissertation Number: 乙第227号
Degree Type: 理学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT21
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-62-Q229
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000185052
http://id.ndl.go.jp/bib/000000185052
Bibliographic Record Category (NDL): 213