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LPE growth and characterization of InGaAsP/InP quantum well structures and its application to semiconductor lasers

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Material Type: 博士論文
Title: LPE growth and characterization of InGaAsP/InP quantum well structures and its application to semiconductor lasers
Author/Editor: 佐々井洋一 [著]
Author Heading: 佐々井, 洋一ササイ, ヨウイチ
Alternative Title: 液相エピタキシャル法による量子井戸層の成長および評価と半導体レーザーへの応用に関する研究エキソウエピタキシャルホウニヨルリョウシイドソウノセイチョウオヨビヒョウカトハンドウタイレーザーエノオウヨウニカンスルケンキュウ
Degree grantor/type: 大阪大学
Date Granted: 昭和62年11月30日
Date Granted (W3CDTF): 1987
Dissertation Number: 乙第4284号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-63-B35
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000192218
http://id.ndl.go.jp/bib/000000192218
Bibliographic Record Category (NDL): 213