窒素イオン打込みSiおよびGaPの損傷とその回復過程に関する研究

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窒素イオン打込みSiおよびGaPの損傷とその回復過程に関する研究

Call No. (NDL): UT51-89-L435
Bibliographic ID of National Diet Library: 000000221192
Persistent ID (NDL): info:ndljp/pid/11567287

Material type: 博士論文

Author: 松森徳衛 [著]

Publisher: -

Publication date: -

Material Format: Paper・Digital

Capacity, size, etc.: -

Name of awarding university/degree: 東海大学,工学博士

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Note (General)：: 博士論文

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Material Type: 博士論文
Title: 窒素イオン打込みSiおよびGaPの損傷とその回復過程に関する研究
Title Transcription: チッソイオンウチコミ Si オヨビ GaP ノソンショウトソノカイフクカテイニカンスルケンキュウ
Author/Editor: 松森徳衛 [著]
Author Heading: 松森, 徳衛マツモリ, トクエ
Degree grantor/type: 東海大学
Date Granted: 平成1年3月25日
Date Granted (W3CDTF): 1989
Dissertation Number: 乙第96号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-89-L435
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000221192
http://id.ndl.go.jp/bib/000000221192
Bibliographic Record Category (NDL): 213