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Influence of crystalline defects and residual stress on the carrier transport characteristics of SOS MOS devices

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Material Type: 博士論文
Title: Influence of crystalline defects and residual stress on the carrier transport characteristics of SOS MOS devices
Author/Editor: 恩賀伸二 [著]
Author Heading: 恩賀, 伸二オンガ, シンジ
Alternative Title: SOS MOS素子の電気電導特性に及ぼす結晶欠陥と残留歪の影響 SOS MOS ソシノデンキデンドウトクセイニオヨボスケッショウケッカントザンリュウヒズミノエイキョウ
Degree grantor/type: 学習院大学
Date Granted: 昭和63年10月19日
Date Granted (W3CDTF): 1988
Dissertation Number: 乙第56号
Degree Type: 理学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT21
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-90-C226
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000227918
http://id.ndl.go.jp/bib/000000227918
Bibliographic Record Category (NDL): 213