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博士論文

Influence of crystalline defects and residual stress on the carrier transport characteristics of SOS MOS devices

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Influence of crystalline defects and residual stress on the carrier transport characteristics of SOS MOS devices

Call No. (NDL)
UT51-90-C226
Bibliographic ID of National Diet Library
000000227918
Persistent ID (NDL)
info:ndljp/pid/11390286
Material type
博士論文
Author
恩賀伸二 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
学習院大学,理学博士
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博士論文

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Paper Digital

Material Type
博士論文
Title
Influence of crystalline defects and residual stress on the carrier transport characteristics of SOS MOS devices
Author/Editor
恩賀伸二 [著]
Author Heading
恩賀, 伸二 オンガ, シンジ
Alternative Title
SOS MOS素子の電気電導特性に及ぼす結晶欠陥と残留歪の影響 SOS MOS ソシ ノ デンキ デンドウ トクセイ ニ オヨボス ケッショウ ケッカン ト ザンリュウヒズミ ノ エイキョウ
Degree grantor/type
学習院大学
Date Granted
昭和63年10月19日
Date Granted (W3CDTF)
1988
Dissertation Number
乙第56号
Degree Type
理学博士