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プラズマプロセスによる(In,Ga)As系半導体の成長と評価

Call No. (NDL): UT51-90-E346
Bibliographic ID of National Diet Library: 000000230145
Persistent ID (NDL): info:ndljp/pid/11391151

Material type: 博士論文

Author: 方隼飛 [著]

Publisher: -

Publication date: -

Material Format: Paper・Digital

Capacity, size, etc.: -

Name of awarding university/degree: 東北大学,工学博士

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Note (General)：: 博士論文

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Paper Digital

Material Type: 博士論文
Title: プラズマプロセスによる(In,Ga)As系半導体の成長と評価
Title Transcription: プラズマプロセスニヨル (In , Ga) Asケイハンドウタイノセイチョウトヒョウカ
Author/Editor: 方隼飛 [著]
Author Heading: 方, 隼飛ホウ, シュンヒ
Degree grantor/type: 東北大学
Date Granted: 平成2年3月28日
Date Granted (W3CDTF): 1990
Dissertation Number: 甲第4220号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Alias of Author: Fang, Sun-fei
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-90-E346
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000230145
http://id.ndl.go.jp/bib/000000230145
Bibliographic Record Category (NDL): 213