The cover of this title could differ from library to library.

The cover of this title could differ from library to library.

Available with Digitized Contents Transmission Service

Find on the publisher's website

国立国会図書館デジタルコレクション

Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.

Become an official registered user >

Si基板上GaAsエピタキシャル成長法とその応用に関する研究

Call No. (NDL): UT51-90-K191
Bibliographic ID of National Diet Library: 000000231078
Persistent ID (NDL): info:ndljp/pid/11393444

Material type: 博士論文

Author: 渡辺義夫 [著]

Publisher: -

Publication date: -

Material Format: Paper・Digital

Capacity, size, etc.: -

Name of awarding university/degree: 早稲田大学,工学博士

Notes on use

Note (General)：: 博士論文

Search by Bookstore

Search by Bookstore

Read this material in an accessible format.

View materials in accessible formats for people with print disabilities (1Type)

Search by Bookstore

Read in Disability Resources

Mina Search
- プレーンテキスト
  Registered users of Mina Search can download or stream this content.

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper Digital

Material Type: 博士論文
Title: Si基板上GaAsエピタキシャル成長法とその応用に関する研究
Title Transcription: Si キバンジョウ GaAs エピタキシャルセイチョウホウトソノオウヨウニカンスルケンキュウ
Author/Editor: 渡辺義夫 [著]
Author Heading: 渡辺, 義夫ワタナベ, ヨシオ
Degree grantor/type: 早稲田大学
Date Granted: 平成2年3月8日
Date Granted (W3CDTF): 1990
Dissertation Number: 乙第783号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-90-K191
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000231078
http://id.ndl.go.jp/bib/000000231078
Bibliographic Record Category (NDL): 213