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Investigation on heavily impurity-doped GaAs/AIAs superlattices grown by molecular beam epitaxy

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Material Type: 博士論文
Title: Investigation on heavily impurity-doped GaAs/AIAs superlattices grown by molecular beam epitaxy
Author/Editor: 小林規矩男 [著]
Author Heading: 小林, 規矩男コバヤシ, キクオ
Alternative Title: MBE法により作製された高濃度ドープGaAs/AIAs超格子膜に関する研究 MBEホウニヨリサクセイサレタコウノウドドープ GaAs
Degree grantor/type: 東京工業大学
Date Granted: 平成1年6月30日
Date Granted (W3CDTF): 1989
Dissertation Number: 乙第1949号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-90-R186
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000233910
http://id.ndl.go.jp/bib/000000233910
Bibliographic Record Category (NDL): 213