Studies on deep level characterization and optoelectronic device application of rapidly thermal-processed GaAs

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CONTENTS
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I.INTRODUCTION
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References
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II.CHARACTERISTICS OF DEEP LEVELS IN Si-IMPLANTED GaAs LAYERS ACTIVATED BY RAPID THERMAL PROCESSING
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2.1 Introduction
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Material Type: 博士論文
Title: Studies on deep level characterization and optoelectronic device application of rapidly thermal-processed GaAs
Author/Editor: 北川章夫 [著]
Author Heading: 北川, 章夫キタガワ, アキオ
Alternative Title: 短時間熱処理されたGaAsの深い準位の評価と光電素子への応用に関する研究タンジカンネツショリサレタ GaAs ノフカイジュンイノヒョウカトコウデンソシエノオウヨウニカンスルケンキュウ
Degree grantor/type: 名古屋工業大学
Date Granted: 平成3年3月15日
Date Granted (W3CDTF): 1991
Dissertation Number: 乙第23号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-91-G23
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000239958
http://id.ndl.go.jp/bib/000000239958
Bibliographic Record Category (NDL): 213