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A fundamental study of chemical beam epitaixy for GaInAsP/InP surface emitting lasers

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Material Type: 博士論文
Title: A fundamental study of chemical beam epitaixy for GaInAsP/InP surface emitting lasers
Author/Editor: 内田俊一 [著]
Author Heading: 内田, 俊一ウチダ, トシカズ
Alternative Title: GalnAsP/InP面発光レーザのための化学ビーム成長法に関する基礎研究 GalnAsP
Degree grantor/type: 東京工業大学
Date Granted: 平成3年3月26日
Date Granted (W3CDTF): 1991
Dissertation Number: 甲第2315号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-91-N227
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000242304
http://id.ndl.go.jp/bib/000000242304
Bibliographic Record Category (NDL): 213