博士論文

Study on device degradation of MOSFETs and its evaluation methods

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Study on device degradation of MOSFETs and its evaluation methods

Call No. (NDL)
UT51-92-E165
Bibliographic ID of National Diet Library
000000248707
Persistent ID (NDL)
info:ndljp/pid/3087951
Material type
博士論文
Author
安田直樹 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
大阪大学,工学博士
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博士論文

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Table of Contents

  • Contents

    p2

  • 1 General Introduction

    p1

  • 1.1 Device degradation induced by hot carriers

    p1

  • 1.2 Improvement of device performance using SOI MOSFETs

    p3

  • 1.3 Overview of this study

    p4

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Bibliographic Record

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Paper Digital

Material Type
博士論文
Title
Study on device degradation of MOSFETs and its evaluation methods
Author/Editor
安田直樹 [著]
Author Heading
安田, 直樹 ヤスダ, ナオキ
Alternative Title
MOSデバイスの特性劣化の機構およびその評価法に関する研究 MOS デバイス ノ トクセイ レッカ ノ キコウ オヨビ ソノ ヒョウカホウ ニ カンスル ケンキュウ
Degree grantor/type
大阪大学
Date Granted
平成4年3月25日
Date Granted (W3CDTF)
1992
Dissertation Number
甲第4571号
Degree Type
工学博士