Study of ultra-high carbon-doping in GaAs and InGaAs grown by metalorganic molecular beam epitaxy
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Table of Contents
論文目録
TABLE OF CONTENTS
PREFACE
Chapter1.Overview and Objective
p1
Chapter2.Key Features and Principles of GaAs Metalorganic Molecular Beam Epitaxy(MOMBE)
p5
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- Material Type
- 博士論文
- Title
- Author/Editor
- 山田巧 [著]
- Author Heading
- 山田, 巧 ヤマダ, タクミ
- Alternative Title
- 有機金属分子線エピタキシー法によるGaAs,InGaAsへの超高濃度カーボンドーピングに関する研究 ユウキ キンゾク ブンシセン エピタキシーホウ ニ ヨル GaAs , InGaAs エ ノ チョウコウノウド カーボンドーピング ニ カンスル ケンキュウ
- Degree grantor/type
- 東京工業大学
- Date Granted
- 平成4年3月26日
- Date Granted (W3CDTF)
- 1992
- Dissertation Number
- 甲第2455号
- Degree Type
- 工学博士