博士論文

Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs

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Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs

Call No. (NDL)
UT51-92-N171
Bibliographic ID of National Diet Library
000000252783
Persistent ID (NDL)
info:ndljp/pid/3090142
Material type
博士論文
Author
斎藤淳二 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京工業大学,工学博士
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博士論文

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Table of Contents

  • 論文目録

  • CONTENTS

    p2

  • Preface

    p1

  • Chapter1 Overview of Electrical Properties of Selectively Doped GaAs/AlGaAs Heterostructures for HEMT ICs

    p1

  • 1.1 Introduction

    p1

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Bibliographic Record

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Paper Digital

Material Type
博士論文
Title
Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs
Author/Editor
斎藤淳二 [著]
Author Heading
斎藤, 淳二 サイトウ, ジュンジ
Alternative Title
HEMT IC用GaAs/AlGaAsヘテロ構造のMBE成長に関する研究 HEMT ICヨウ GaAs/AlGaAs ヘテロ コウゾウ ノ MBE セイチョウ ニ カンスル ケンキュウ
Degree grantor/type
東京工業大学
Date Granted
平成3年5月31日
Date Granted (W3CDTF)
1991
Dissertation Number
乙第2220号
Degree Type
工学博士