Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs

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Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs

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Provided by：国立国会図書館デジタルコレクション

論文目録
CONTENTS
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Preface
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Chapter1 Overview of Electrical Properties of Selectively Doped GaAs/AlGaAs Heterostructures for HEMT ICs
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1.1 Introduction
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Material Type: 博士論文
Title: Investigation on molecular beam epitaxial growth of GaAs/AlGaAs heterostructures for HEMT ICs
Author/Editor: 斎藤淳二 [著]
Author Heading: 斎藤, 淳二サイトウ, ジュンジ
Alternative Title: HEMT IC用GaAs/AlGaAsヘテロ構造のMBE成長に関する研究 HEMT ICヨウ GaAs/AlGaAs ヘテロコウゾウノ MBE セイチョウニカンスルケンキュウ
Degree grantor/type: 東京工業大学
Date Granted: 平成3年5月31日
Date Granted (W3CDTF): 1991
Dissertation Number: 乙第2220号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-92-N171
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000252783
http://id.ndl.go.jp/bib/000000252783
Bibliographic Record Category (NDL): 213