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Single crystal growth of silicon carbide by gas source molecular beam epitaxy

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Material Type: 博士論文
Title: Single crystal growth of silicon carbide by gas source molecular beam epitaxy
Author/Editor: 吉信達夫 [著]
Author Heading: 吉信, 達夫ヨシノブ, タツオ
Alternative Title: ガスソース分子線エピタキシー法によるシリコンカーバイドの単結晶成長ガスソースブンシセンエピタキシーホウニヨルシリコンカーバイドノタンケッショウセイチョウ
Degree grantor/type: 京都大学
Date Granted: 平成4年9月24日
Date Granted (W3CDTF): 1992
Dissertation Number: 甲第5198号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-92-S439
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000255020
http://id.ndl.go.jp/bib/000000255020
Bibliographic Record Category (NDL): 213