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国立国会図書館デジタルコレクション
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Table of Contents
Table of Contents
p7
Chapter1 Introduction
p1
Chapter2 Simulation and analysis of the fundamental properties of ultrathin-film SOI MOSFETs
p7
2.1 Simulated device structure
p7
2.2 Subthreshold characteristic
p9
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Bibliographic Record
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- Material Type
- 博士論文
- Author/Editor
- 吉見信 [著]
- Author Heading
- 吉見, 信 ヨシミ, マコト
- Alternative Title
- 絶縁膜上のシリコンに形成したMOSトランジスタの電気特性 ゼツエンマクジョウ ノ シリコン ニ ケイセイシタ MOS トランジスタ ノ デンキ トクセイ
- Degree grantor/type
- 東京大学
- Date Granted
- 平成3年5月30日
- Date Granted (W3CDTF)
- 1991
- Dissertation Number
- 乙第10226号
- Degree Type
- 博士 (工学)