Fundamental studies on GaInP/AlInP strained-quantum-wire lasers grown through self-organization process in gas source molecular beam epitaxy

• Material Type: 博士論文
• Title: Fundamental studies on GaInP/AlInP strained-quantum-wire lasers grown through self-organization process in gas source molecular beam epitaxy
• Author/Editor: 吉田順自 [著]
• Author Heading: 吉田, 順自 ヨシダ, ジュンジ
• Degree grantor/type: 上智大学
• Date Granted: 平成8年3月31日
• Date Granted (W3CDTF): 1996
• Dissertation Number: 甲第167号
• Degree Type: 博士 (工学)
• Note (Dissertation): 博士論文
• Place of Publication (Country Code): JP
• NDLC: UT51
• Note (General): 博士論文
• Holding library: 国立国会図書館
• Call No.: UT51-96-H131
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000000296401; http://id.ndl.go.jp/bib/000000296401
• Bibliographic Record Category (NDL): 213

Table of Contents

Contents

CHAPTER I Introduction

1.1 Introductory Remarks

1-2 Short Wavelength Visible Light Emitting Semiconductor Lasers

1.3 Semiconductor Materials for Visible Light Emitting Devices