Jump to main content

博士論文

InGaAs歪量子井戸型半導体光能動素子の高性能化に関する研究

Icons representing 博士論文
The cover of this title could differ from library to library. Link to Help Page

Available with Digitized Contents Transmission Service

Find on the publisher's website

国立国会図書館デジタルコレクション

Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.

Become an official registered user >

Log in >

InGaAs歪量子井戸型半導体光能動素子の高性能化に関する研究

Call No. (NDL)
UT51-97-G357
Bibliographic ID of National Diet Library
000000308225
Persistent ID (NDL)
info:ndljp/pid/3123035
Material type
博士論文
Author
竹下達也 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
九州大学,博士 (工学)
View All

Notes on use

Note (General)：

博士論文

Search by Bookstore

Search by Bookstore

Read this material in an accessible format.

View materials in accessible formats for people with print disabilities (1Type)

Table of Contents

Provided by：国立国会図書館デジタルコレクションLink to Help Page

  • 目次

    p1

  • 第1章 序論

    p1

  • 1.1 研究の背景

    p1

  • 1.2 従来の研究と本研究の目的

    p5

  • 1.3 本論文の概要

    p7

Search by Bookstore

Read in Disability Resources

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper Digital

Material Type
博士論文
Title
InGaAs歪量子井戸型半導体光能動素子の高性能化に関する研究
Title Transcription
InGaAs ヒズミ リョウシ イドガタ ハンドウタイ ヒカリ ノウドウ ソシ ノ コウセイノウカ ニ カンスル ケンキュウ
Author/Editor
竹下達也 [著]
Author Heading
竹下, 達也 タケシタ, タツヤ
Degree grantor/type
九州大学
Date Granted
平成9年3月27日
Date Granted (W3CDTF)
1997
Dissertation Number
甲第4067号
Degree Type
博士 (工学)