The cover of this title could differ from library to library.

The cover of this title could differ from library to library.

Available with Digitized Contents Transmission Service

Find on the publisher's website

国立国会図書館デジタルコレクション

Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.

Become an official registered user >

Sub-0.1μmCMOSプロセス技術に関する研究

Call No. (NDL): UT51-99-H512
Bibliographic ID of National Diet Library: 000000335422
Persistent ID (NDL): info:ndljp/pid/3150230

Material type: 博士論文

Author: 後藤賢一 [著]

Publisher: -

Publication date: -

Material Format: Paper・Digital

Capacity, size, etc.: -

Name of awarding university/degree: 東北大学,博士(工学)

Notes on use

Note (General)：: 博士論文

Search by Bookstore

Search by Bookstore

Read this material in an accessible format.

View materials in accessible formats for people with print disabilities (1Type)

Table of Contents

論文内容要旨
目次
p1
第1章序論
p3
第2章デカボランイオン注入法
p6
2.1 はじめに
p6

Search by Bookstore

Read in Disability Resources

Mina Search
- プレーンテキスト
  Registered users of Mina Search can download or stream this content.

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper Digital

Material Type: 博士論文
Title: Sub-0.1μmCMOSプロセス技術に関する研究
Title Transcription: Sub-0.1mm CMOS プロセスギジュツニカンスルケンキュウ
Author/Editor: 後藤賢一 [著]
Author Heading: 後藤, 賢一ゴトウ, ケンイチ
Degree grantor/type: 東北大学
Date Granted: 平成10年7月8日
Date Granted (W3CDTF): 1998
Dissertation Number: 乙第7512号
Degree Type: 博士(工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-99-H512
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000335422
http://id.ndl.go.jp/bib/000000335422
Bibliographic Record Category (NDL): 213