Studies on fabrication of low-dielectric-constant siloxane film by plasma processes

• Material Type: 博士論文
• Title: Studies on fabrication of low-dielectric-constant siloxane film by plasma processes
• Author/Editor: 藤井俊明 [著]
• Author Heading: 藤井, 俊明 フジイ, トシアキ
• Degree grantor/type: 名城大学
• Date Granted: 平成11年3月18日
• Date Granted (W3CDTF): 1999
• Dissertation Number: 甲第35号
• Degree Type: 博士(工学)
• Note (Dissertation): 博士論文
• Place of Publication (Country Code): JP
• NDLC: UT51
• Note (General): 博士論文
• Holding library: 国立国会図書館
• Call No.: UT51-99-L139
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000000336976; http://id.ndl.go.jp/bib/000000336976
• Bibliographic Record Category (NDL): 213

Table of Contents

CONTENTS

CHAPTER 1.INTRODUCTION

1.1 Technology of Multilevel Interconnection for ULSI Devices

1.2 Materials Possessing Siloxane Structures

1.3 Problems of Previous Studies on Fabrication of Low-Dielectric-Constant Film