博士論文

MBEによる低温成長GaAsにおける過剰As導入機構の解明

Icons representing 博士論文
The cover of this title could differ from library to library. Link to Help Page

Available with Digitized Contents Transmission Service

Find on the publisher's website

国立国会図書館デジタルコレクション

Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.

Become an official registered user >

Log in >

MBEによる低温成長GaAsにおける過剰As導入機構の解明

Call No. (NDL)
UT51-99-Q225
Bibliographic ID of National Diet Library
000000339686
Persistent ID (NDL)
info:ndljp/pid/3154495
Material type
博士論文
Author
須田篤史 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
北陸先端科学技術大学院大学,博士 (材料科学)
View All

Notes on use

Note (General)：

博士論文

Search by Bookstore

Search by Bookstore

Read this material in an accessible format.

View materials in accessible formats for people with print disabilities (1Type)

Table of Contents

  • 博士論文要旨

  • 目次

    p1

  • 1 序論

    p1

  • 1.1 はじめに

    p1

  • 1.2 GaAsの化学量論的組成の制御

    p10

Search by Bookstore

Read in Disability Resources

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper Digital

Material Type
博士論文
Title
MBEによる低温成長GaAsにおける過剰As導入機構の解明
Title Transcription
MBE ニ ヨル テイオン セイチョウ GaAs ニ オケル カジョウ As ドウニュウ キコウ ノ カイメイ
Author/Editor
須田篤史 [著]
Author Heading
須田, 篤史 スダ, アツシ
Degree grantor/type
北陸先端科学技術大学院大学
Date Granted
平成11年3月23日
Date Granted (W3CDTF)
1999
Dissertation Number
甲第81号
Degree Type
博士 (材料科学)