InGaAs/InP液滴ヘテロエピタキシーに関する研究
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Table of Contents
目次
p1
第1章 序論
p1
1.1 はじめに
p1
1.2 半導体量子ドットの形成
p2
1.3 本研究の目的
p3
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- Material Type
- 博士論文
- Author/Editor
- 野々垣陽一 [著]
- Author Heading
- 野々垣陽一 ノノガキ, ヨウイチ
- Extent
- 冊
- Additional Title
- InGaAs InP 液滴 ヘテロ エピタキシー
- Degree grantor/type
- 名古屋大学
- Date Granted
- 平成12年1月31日
- Date Granted (W3CDTF)
- 2000
- Dissertation Number
- 乙第5691号