Crystal growth of 3C-SiC on Si(100) substrate using HMDS single precursor by APCVD

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Crystal growth of 3C-SiC on Si(100) substrate using HMDS single precursor by APCVD

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Material Type: 博士論文
Title: Crystal growth of 3C-SiC on Si(100) substrate using HMDS single precursor by APCVD
Author/Editor: 陳義 [著]
Author Heading: 陳, 義チン, ギ
Degree grantor/type: 京都工芸繊維大学
Date Granted: 平成12年3月24日
Date Granted (W3CDTF): 2000
Dissertation Number: 甲第224号
Degree Type: 博士 (工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2000-K417
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000356602
http://id.ndl.go.jp/bib/000000356602
Bibliographic Record Category (NDL): 213