Co-Evolution of Microstructure and Dislocation Dynamics in InGaP/GaP Engineering High Quality Epitaxial Transparent Substrates

Search by Bookstore

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 博士論文
Title: Co-Evolution of Microstructure and Dislocation Dynamics in InGaP/GaP Engineering High Quality Epitaxial Transparent Substrates
Author/Editor: Andrew Y. Kim.
Author Heading: Kim, Andrew Y.
Publication, Distribution, etc.: Cambridge : Massachusetts Institute of Technology
Publication Date: 2000.
Extent: 3 Microfiches ( 265 fr.) : negative, ill.
Degree grantor/type: Massachusetts Institute of Technology
Date Granted: 2000.
Date Granted (W3CDTF): 2000
Note (Dissertation): 博士論文
Thesis (doctoral) --Massachusetts Institute of Technology, 2000.
Place of Publication (Country Code): US
Text Language Code: eng
Note (Material Type): [microform]
Note (Bibliography): Includes bibliographies.
Holding library: 国立国会図書館
Call No.: LS-DIMIT-00-158
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000003447274
http://id.ndl.go.jp/bib/000003447274
Bibliographic Record Category (NDL): 216