ICCG-13/ICVGE-11 : proceedings of the 13th International Conference on Crystal Growth in conjunction with the 11th International Conference on Vapor Growth and Epitaxy : Kyoto,Japan,30 July-4 August 2001. pt.2(section 4-5)

• Material Type: 図書
• Title: ICCG-13/ICVGE-11 : proceedings of the 13th International Conference on Crystal Growth in conjunction with the 11th International Conference on Vapor Growth and Epitaxy : Kyoto,Japan,30 July-4 August 2001
• Volume: pt.2(section 4-5)
• Author/Editor: edited by T.Hibiya, J.Mullin, M.Uwaha
• Author Heading: 日比谷, 孟俊, 1945- ヒビヤ, タケトシ, 1945- ( 00188142 )Authorities; Mullin, J. B ( 00922057 )Authorities; 上羽, 牧夫, 1950- ウワハ, マキオ, 1950- ( 00872107 )Authorities
• Publication, Distribution, etc.: Tokyo : Elsevier
• Publication Date: c2002
• Publication Date (W3CDTF): 2002
• Extent: p906-1619
• Size: 27cm
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: M18; MC145
• Target Audience: 一般
• Note (General): "Special issue of Journal of Crystal Growth, Volumes 237-239, Part 2"
• Holding library: 国立国会図書館
• Call No.: M18-B158
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000004060079; http://id.ndl.go.jp/bib/000004060079
• National Bibliography No. (JPNO): 20455761
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition
• Bibliographic Record Category (NDL): 113

Table of Contents

Plenary lectures (2)

Nitride semiconductors—impact on the future world/ 905

SECTION 4. WIDE BAND GAP MATERIALS

4.1. Nitrides: Bulk crystals

Growth and characterization of freestanding GaN substrates/ 912