Growth of High-Quality Thin-Film Ge Single Crystals by Plasma-Enhanced Chemical Vapor Deposition NASA-TP-2532 N86-20586 NAS-1602532 L-16011

Growth of High-Quality Thin-Film Ge Single Crystals by Plasma-Enhanced Chemical Vapor Deposition

NASA-TP-2532 N86-20586 NAS-1602532 L-16011

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Material Type: 規格・テクニカルリポート類
Title: Growth of High-Quality Thin-Film Ge Single Crystals by Plasma-Enhanced Chemical Vapor Deposition
Author/Editor: Outlaw, R. A
Hopson, P
Extent: microfiche 15 p
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : NASA-TP-2532
テクニカルリポート番号 : N86-20586
テクニカルリポート番号 : NAS-1602532
テクニカルリポート番号 : L-16011
Holding library: 国立国会図書館
Call No.: LS-N86/20586
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000004990135
http://id.ndl.go.jp/bib/000004990135
Bibliographic Record Category (NDL): 291