Effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si(sub 1-x)Ge(sub x) alloy layers on silicon CONF-950412-24 DE95 014581

Effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si(sub 1-x)Ge(sub x) alloy layers on silicon

CONF-950412-24 DE95 014581

Call No. (NDL): LS-DE95/014581
Bibliographic ID of National Diet Library: 000005536889

Material type: 規格・テクニカルリポート類

Author: Antonell, M. Jほか

Publisher: -

Publication date: 1995

Material Format: Microform

Capacity, size, etc.: 6 p. (1 microfiche)

NDC: -

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Material Type: 規格・テクニカルリポート類
Title: Effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si(sub 1-x)Ge(sub x) alloy layers on silicon
Author/Editor: Antonell, M. J
Jones, K. S
Haynes, T. E
Publication Date: 1995
Publication Date (W3CDTF): 1995
Extent: 6 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : CONF-950412-24
テクニカルリポート番号 : DE95 014581
Holding library: 国立国会図書館
Call No.: LS-DE95/014581
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005536889
http://id.ndl.go.jp/bib/000005536889
Bibliographic Record Category (NDL): 291