Enhanced low-rate radiation-induced charge trapping at the emitter-base/oxide interface of bipolar devices SAND-96-2092C DE96 014087 CONF-9612311

Enhanced low-rate radiation-induced charge trapping at the emitter-base/oxide interface of bipolar devices

SAND-96-2092C DE96 014087 CONF-9612311

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Material Type: 規格・テクニカルリポート類
Title: Enhanced low-rate radiation-induced charge trapping at the emitter-base/oxide interface of bipolar devices
Author/Editor: Fleetwood, D. M
Schrimpf, R. D
Publication Date: 1996
Publication Date (W3CDTF): 1996
Extent: 2 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-96-2092C
テクニカルリポート番号 : DE96 014087
テクニカルリポート番号 : CONF-9612311
Holding library: 国立国会図書館
Call No.: LS-DE96/014087
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005863870
http://id.ndl.go.jp/bib/000005863870
Bibliographic Record Category (NDL): 291