0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant SAND-97-0384C DE97 003209 CONF-9705174

0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant

SAND-97-0384C DE97 003209 CONF-9705174

Call No. (NDL): LS-DE97/003209
Bibliographic ID of National Diet Library: 000005868530

Material type: 規格・テクニカルリポート類

Author: Baca, A. Gほか

Publisher: -

Publication date: 1997

Material Format: Microform

Capacity, size, etc.: 4 p. (1 microfiche)

NDC: -

View All

Search by Bookstore

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Microform

Material Type: 規格・テクニカルリポート類
Title: 0.5 micrometer E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant
Author/Editor: Baca, A. G
Sherwin, M. E
Zolper, J. C
Shul, R. J
Briggs, R. D
Publication Date: 1997
Publication Date (W3CDTF): 1997
Extent: 4 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-97-0384C
テクニカルリポート番号 : DE97 003209
テクニカルリポート番号 : CONF-9705174
Holding library: 国立国会図書館
Call No.: LS-DE97/003209
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005868530
http://id.ndl.go.jp/bib/000005868530
Bibliographic Record Category (NDL): 291