Charge state defect engineering of silicon during ion implantation CONF-961202-37 DE97 002627

Charge state defect engineering of silicon during ion implantation

CONF-961202-37 DE97 002627

Call No. (NDL): LS-DE97/002627
Bibliographic ID of National Diet Library: 000005883061

Material type: 規格・テクニカルリポート類

Author: Brown, R. Aほか

Publisher: -

Publication date: 1997

Material Format: Microform

Capacity, size, etc.: 7 p. (1 microfiche)

NDC: -

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Microform

Material Type: 規格・テクニカルリポート類
Title: Charge state defect engineering of silicon during ion implantation
Author/Editor: Brown, R. A
Ravi, J
Erokhin, Y
Rozgonyi, G. A
White, C. W
Publication Date: 1997
Publication Date (W3CDTF): 1997
Extent: 7 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : CONF-961202-37
テクニカルリポート番号 : DE97 002627
Holding library: 国立国会図書館
Call No.: LS-DE97/002627
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005883061
http://id.ndl.go.jp/bib/000005883061
Bibliographic Record Category (NDL): 291