Physics and technology of high-k gate dielectrics 1 : proceedings of the international symposium on high dielectric constant materials: materials science, processing, reliability, and manufacturing issues : held in Salt Lake City, Utah, October 20-24, 2002. : 1st international symposium on high dielectric constant materials: materials science, processing, reliability, and manufacturing issues : Oct 2002, Salt Lake City, UT. (PV ; 2002-28)

Physics and technology of high-k gate dielectrics 1 : proceedings of the international symposium on high dielectric constant materials: materials science, processing, reliability, and manufacturing issues : held in Salt Lake City, Utah, October 20-24, 2002. : 1st international symposium on high dielectric constant materials: materials science, processing, reliability, and manufacturing issues : Oct 2002, Salt Lake City, UT.

(PV ; 2002-28)

Call No. (NDL): M17-04-3239
Bibliographic ID of National Diet Library: 000007484181

Material type: 図書

Author: Kar, S.ほか

Publisher: Electrochemical Society

Publication date: c2003.

Material Format: Paper

Capacity, size, etc.: xvii, 304 p. : ill. ; 24 cm.

NDC: -

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Note (General)：: Selected papers."This volume is the proceedings of The First International Symposium on High Dielectric Constant Materials: Materials Science, Process...

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Paper

Material Type: 図書
ISBN: 1566773954
Title: Physics and technology of high-k gate dielectrics 1 : proceedings of the international symposium on high dielectric constant materials: materials science, processing, reliability, and manufacturing issues : held in Salt Lake City, Utah, October 20-24, 2002. : 1st international symposium on high dielectric constant materials: materials science, processing, reliability, and manufacturing issues : Oct 2002, Salt Lake City, UT.
Series Title: PV ; 2002-28
Title Heading: Proceedings (Electrochemical Society) v. 2002-28.
Author Heading: Kar, S.
Electrochemical Society. Meeting (202nd : 2002 : Salt Lake, City, Utah)
International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues (1st 2002 : Salt Lake City, Utah)
Publication, Distribution, etc.: Pennington : Electrochemical Society
Publication Date: c2003.
Publication Date (W3CDTF): 2003
Extent: xvii, 304 p. : ill. ; 24 cm.
Place of Publication (Country Code): US
Text Language Code: eng
Subject Heading: Gate array circuits -- Congresses.
Dielectrics -- Congresses.
NDLC: M17
Note (General): Selected papers.
"This volume is the proceedings of The First International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, (...) and was held during its 202nd Meeting." -- p. v.
Note (Bibliography): Includes bibliographical references and indexes.
Holding library: 国立国会図書館
Call No.: M17-04-3239
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000007484181
http://id.ndl.go.jp/bib/000007484181
LC Control Number: 2003109748
https://lccn.loc.gov/2003109748
RLIN No.: MOHG54038171-B
Bibliographic Record Category (NDL): 215