Applied physics express : APEX

• Material Type: 雑誌
• Title: Applied physics express : APEX
• Volume: 5(1)-5(6):2012.1-2012.6
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : Japan Society of Applied Physics
• Publication Date: 2012
• Publication Date (W3CDTF): 2012
• Year and volume of publication: v. 1, no. 1 (Jan. 2008)-
• Size: 30cm
• ISSN (Periodical Title): 1882-0778
• ISSN-L (Periodical Title): 1882-0778
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Holding library: 国立国会図書館
• Call No.: Z78-A526
• Related Material: 関連資料; https://ndlsearch.ndl.go.jp/books/R100000002-I000004245159; 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025350370
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000008533915; http://id.ndl.go.jp/bib/000008533915
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition

Table of Contents

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility

Ionoluminescence as Sensor of Structural Disorder in Crystalline SiO₂ : Determination of Amorphization Threshold by Swift Heavy Ions

High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering

High Transparency and Electrical Conductivity of SnO₂:Nb Thin Films Formed through (001)-Oriented SnO:Nb on Glass Substrate

Flexible Microstrain Sensors Based on Piezoelectric ZnO Microwire Network Structure

High Mobility in a Stable Transparent Perovskite Oxide

Enhanced Carrier Generation in Nb-Doped SnO₂ Thin Films Grown on Strain-Inducing Substrates

Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited AI2O3/lnP Heterostructures with Various Surface Orientations (001), (110), and (111)

X-ray Microbeam Three-Dimensional Topography Imaging and Strain Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC

Lateral Control of Indium Content and Wavelength of Ⅲ–Nitride Diode Lasers by Means of GaN Substrate Patterning

Role of Adsorbed H₂O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Effects of Thermal Treatments on the Trapping Properties of HfO₂ Films for Charge Trap Memories

Electrical Properties of Ultrathin SiO₂ Layer Deposited at 50℃ by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition

Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO₂ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors

Structural Study of Formation of Mn-Doped ZnO Nanocrystals Embedded in Alumina Matrix from ZnMnO/Al₂O₃ Multilayer Nanostructures

High-Work-Function Transparent Conductive Oxides with Multilayer Films

Novel Combustion Route for SrTiO₃ Powders

Frequency-Tunable Quantum Beats under a Franz–Keldysh Oscillation Condition in a GaAs/AlxGa₁-xAs Superlattice

Contactless Microwave Measurements of Photoconductivity in Silicon Hyperdoped with Chalcogens

Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46μm

Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films

Experimental Determination of Electron Affinities for InN and GaN Polar Surfaces

Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure

Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels

AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy

Thermoelectric Properties of Mineral Tetrahedrites Cu₁₀Tr₂Sb₄S₁₃ with Low Thermal Conductivity

Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures

Micro-Photoluminescence Study on the Influence of Oxidation on Stacking Faults in 4H-SiC Epilayers