Applied physics express : APEX

• Material Type: 雑誌
• Title: Applied physics express : APEX
• Volume: 5(7)-5(12):2012.7-2012.12
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : Japan Society of Applied Physics
• Publication Date: 2012
• Publication Date (W3CDTF): 2012
• Year and volume of publication: v. 1, no. 1 (Jan. 2008)-
• Size: 30cm
• ISSN (Periodical Title): 1882-0778
• ISSN-L (Periodical Title): 1882-0778
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Holding library: 国立国会図書館
• Call No.: Z78-A526
• Related Material: 関連資料; https://ndlsearch.ndl.go.jp/books/R100000002-I000004245159; 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025350370
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000008533915; http://id.ndl.go.jp/bib/000008533915
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition

Table of Contents

Analysis of Auger Recombination for Wurtzite InGaN

Characterization of Ni-GaSb Alloys Formed by Direct Reaction of Ni with GaSb

Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

Improved Cathode Interface Contact in Poly(3-hexylthiophene) and 1-(3-Methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 Based Organic Bulk Heterojunction Solar Cells by Introducing Compressive Stress

Ab initio Calculations on the Atomic and Electronic Structures of Oxygen-Doped Hexagonal Ge₂Sb₂Te₅

Role of Alkaline-Earth Metal in Solution-Processed Indium Oxide Based Thin-Film Transistors

Dual Resistive Switching Characteristics in Cu[x]Si[y]O Resistive Memory

Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs

Investigation of Phonon Deformation Potentials in Si₁₋xGe[x] by Oil-Immersion Raman Spectroscopy

Full Picture of Valence Band Structure of Rubrene Single Crystals Probed by Angle-Resolved and Excitation-Energy-Dependent Photoelectron Spectroscopy

Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

Defects and Its Effects on Properties of Cu-Deficient Cu₂ZnSnSe₄ Bulks with Different Zn/Sn Ratios

Realization of One-Diode-Type Resistive-Switching Memory with Cr-SrTiO₃ Film

Analysis of the Dislocation and Polarity in an AlN Layer Grown Using Ga–Al Flux

Indium Compositional Homogeneity in In₀.₁₇Al₀.₈₃N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Epitaxial Growth of ZnO/InN Core/Shell Nanostructures for Solar Cell Applications

Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes

Room-Temperature Magnetocapacitance in Fe-Doped K₀.₅Na₀.₅Nb₀.₉₅Ta₀.₀₅O₃ Ceramics

Lattice Deformation in a-Plane ZnO Films Grown on r-Plane Al₂O₃ Substrates Grown by Plasma-Assisted Molecular-Beam Epitaxy

Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer

Cu₂ZnSn(SxSe₁₋x)₄ Thin-Film Solar Cells Utilizing Simultaneous Reaction of a Metallic Precursor with Elemental Sulfur and Selenium Vapor Sources

Transmission Electron Microscopy Analysis of a Threading Dislocation with c + a Burgers Vector in 4H-SiC

Thermal Conductivity of Size-Controlled Bulk Silicon Nanocrystals Using Self-Limiting Oxidation and HF Etching

Nitridation- and Buffer-Layer-Free Growth of <1100>-Oriented GaN Domains on m-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy

Step and Terrace Formation on Ge(111) Surface in H₂ Annealing

Increased Organic Photovoltaic Cell Efficiency by Incorporating a Nonionic Fluorinated Surfactant Cathode Interlayer

Enhancement of Two-Bit Performance of Dual-Pi-Gate Charge Trapping Layer Flash Memory

Spectral Control of Thermal Radiation by Metasurface with Split-Ring Resonator