Japanese journal of applied physics : JJAP

• Material Type: 雑誌
• Title: Japanese journal of applied physics : JJAP
• Volume: 52(8)(2):2013.8
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : The Japan Society of Applied Physics
• Publication Date: 2013
• Publication Date (W3CDTF): 2013
• Year and volume of publication: v. 47, no. 1 (Jan. 2008)-
• Size: 30cm
• ISSN (Periodical Title): 0021-4922
• ISSN-L (Periodical Title): 0021-4922
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Note (General): Description based on the latest issue; Issued in 2 parts
• Holding library: 国立国会図書館
• Call No.: Z53-A375
• Related Material: 区分換; https://ndlsearch.ndl.go.jp/books/R100000002-I025330922
• Replaces: 継続前; https://ndlsearch.ndl.go.jp/books/R100000002-I000000159719
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000009262265; http://id.ndl.go.jp/bib/000009262265
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition

Table of Contents

High Quality, Low Cost Ammonothermal Bulk GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)

Development and Progress in Bulk c-Plane AlN Single-Crystalline Template Growth for Large-Area Native Seeds (Special Issue : Recent Advances in Nitride Semiconductors)

Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method (Special Issue : Recent Advances in Nitride Semiconductors)

Structural Analysis of Carbon-Added Na-Ga Melts in Na Flux GaN Growth by First-Principles Calculation (Special Issue : Recent Advances in Nitride Semiconductors)

Numerical Simulation of Heat and Fluid Flow in Ammonothermal GaN Bulk Crystal Growth Process (Special Issue : Recent Advances in Nitride Semiconductors)