Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on nitride interfacial layers

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Material Type: 博士論文
Title: Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on nitride interfacial layers
Author/Editor: Andrew P. Ritenour.
Author Heading: Ritenour, Andrew P.
Publication, Distribution, etc.: Cambridge : Massachusetts Institute of Technology
Publication Date: 2007.
Extent: 151 p.
Degree grantor/type: Massachusetts Institute of Technology
Date Granted: 2007.
Date Granted (W3CDTF): 2007
Note (Dissertation): 博士論文
Thesis (doctoral) --Massachusetts Institute of Technology, 2007.
Place of Publication (Country Code): US
Text Language Code: eng
Note (Bibliography): Includes bibliographies.
Holding library: 国立国会図書館
Call No.: M-DIMIT-07-198
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000010047957
http://id.ndl.go.jp/bib/000010047957
Bibliographic Record Category (NDL): 216