パワー・デバイスIGBT活用の基礎と実際 : MOSFETとトランジスタの特徴を活かしたスイッチング素子

(Power electronics)

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Material Type: 図書
ISBN: 978-4-7898-3609-8
Title: パワー・デバイスIGBT活用の基礎と実際 : MOSFETとトランジスタの特徴を活かしたスイッチング素子
Title Transcription: パワーデバイス IGBT カツヨウノキソトジッサイ : MOSFET トトランジスタノトクチョウオイカシタスイッチングソシ
Author/Editor: 五十嵐征輝編著
Series Title: Power electronics
Author Heading: 五十嵐, 征輝イガラシ, セイキ ( 01224963 )Authorities
Publication, Distribution, etc.: 東京 : CQ出版
Publication Date: 2011.4
Publication Date (W3CDTF): 2011
Extent: 183p
Size: 21cm
Place of Publication (Country Code): JP
Text Language Code: jpn
Subject Heading: トランジスタトランジスタ ( 00573299 )Authorities
NDC 9th ed.: 549.8 : Electronic engineering
NDLC: ND371
Target Audience: 一般
Note (Bibliography): 文献あり索引あり
Price: 2400円
Holding library: 国立国会図書館
Call No.: ND371-J169
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000011140089
http://id.ndl.go.jp/bib/000011140089
National Bibliography No. (JPNO): 21911444
NS-MARC No.: 121556500
Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition
Bibliographic Record Category (NDL): 112