Radiation defects in ion implanted and/or high-energy irradiated MOS structures / S. Kaschieva and S.N. Dmitriev.

• Material Type: 図書
• ISBN: 9781608761883 (hbk.); 1608761886 (hbk.)
• Title: Radiation defects in ion implanted and/or high-energy irradiated MOS structures / S. Kaschieva and S.N. Dmitriev.
• Series Title: Electrical engineering developments series
• Title Heading: Electrical engineering developments series.
• Author Heading: Kaschieva, S., 1962-; Dmitriev, S. N., 1961-
• Publication, Distribution, etc.: New York : Nova Science Publishers
• Publication Date: c2010.
• Publication Date (W3CDTF): 2010
• Extent: ix, 195 p. : ill. (some col.) ; 24 cm.
• Place of Publication (Country Code): US
• Text Language Code: eng
• Subject Heading: Metal oxide semiconductors.; Semiconductor doping.; Semiconductors -- Effect of radiation on.; Ion implantation.
• LCC: QC611.8.M4
• DDC: 621.3815/2
• NDLC: MC151
• Note (Bibliography): Includes bibliographical references and index.
• Holding library: 国立国会図書館
• Call No.: MC151-B32
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000011163471; http://id.ndl.go.jp/bib/000011163471
• LC Control Number: 2009034541; https://lccn.loc.gov/2009034541
• OCLC No.: 430055513; https://www.worldcat.org/oclc/430055513
• Cataloging Rule: Anglo-American Cataloging Rules
• Bibliographic Record Category (NDL): 211