Stress induced phenomena and reliability in 3D microelectronics : Kyoto, Japan : 28-30 May 2012 : international workshops "stress management for 3D ICs using through silicon vias--design for reliability" : 12th international workshop on stress-induced phenomena in microelectronics : May 2012, Kyoto, Japan.

• Material Type: 図書
• ISBN: 9780735412354 (Original Print); 0735412359; 9781632667410 (Print on Demand); 163266741X
• ISSN (series): 0094-243X
• Title: Stress induced phenomena and reliability in 3D microelectronics : Kyoto, Japan : 28-30 May 2012 : international workshops "stress management for 3D ICs using through silicon vias--design for reliability" : 12th international workshop on stress-induced phenomena in microelectronics : May 2012, Kyoto, Japan.
• Series Title: AIP Conference Proceedings ; 1601
• Title Heading: AIP conference proceedings ; no. 1601. 0094-243X
• Author Heading: author. ： International Workshop on Stress Management for 3D ICs Using Through Silicon Vias (2011 March 17 : Santa Clara, Calif.); Ho, P. S.; Hu, Chao-Kun. IBM T.J. Watson Research Center, New York, USA.; Nakamoto, Mark.; Ogawa, Shinichi.; Sukharev, Valeriy.; Smith, Larry. SEMATECH, New York, USA.; Zschech, Ehrenfried.; author. ： International Workshop on Stress Management for 3D ICs Using Through Silicon Vias (2011 July 13 : San Francisco, Calif.); author. ： International Workshop on Stress Management for 3D ICs Using Through Silicon Vias (2011 October 12 : Dresden, Germany); author. ： International Workshop on Stress-Induced Phenomena in Microelectronics (12th : 2012 : Kyoto, Japan)
• Publication, Distribution, etc.: Melville, New York : American Institute of Physics (出版); Red Hook, NY : printed by Curran Associates, Inc. (製作)
• Publication Date: 2014.
• Publication Date (W3CDTF): 2014
• Extent: vi, 185 pages
• Other physical details: illustrations
• Size: 27 cm.
• Place of Publication (Country Code): US
• Text Language Code: eng
• Content Type: text
• Media Type: unmediated
• Carrier Type: volume
• Subject Heading: Three-dimensional integrated circuits--Congresses.; Interconnects (Integrated circuit technology)--Defects--Congresses.; Metal-metal bonds--Congresses.; Strength of materials--Congresses.; Nanostructured materials--Congresses.; Semiconductors--Congresses.; Copper--Electric properties--Congresses.
• LCC: TK7874.893
• NDLC: M17
• Target Audience: 一般
• Note (General): Papers.; "This volume of proceedings contains papers from three International Workshops 'Stress Management for 3D ICs using Through Silicon Vias--Design for Reliability' held in Santa Clara/CA, USA, on March 17, 2011, in San Francisco/CA, USA, on July 13, 2011, and in Dresden, Germany, on October 12, 2011, as well as from the 12th International Workshop on Stress-Induced Phenomena in Microelectronics held in Kyoto, Japan, on May 28-30, 2012."--Preface.; "Conference collection."
• Note (Bibliography): Includes bibliographical references.
• Holding library: 国立国会図書館
• Call No.: M17-15-831
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 025624099; http://id.ndl.go.jp/bib/025624099
• Cataloging Rule: RDA
• Bibliographic Record Category (NDL): 215