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図書

Ferroelectric-gate field effect transistor memories : device physics and applications Second edition. (Topics in Applied Physics ; volume 131)

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Ferroelectric-gate field effect transistor memories : device physics and applications

Second edition.

(Topics in Applied Physics ; volume 131)

Call No. (NDL)
ND371-D8
Bibliographic ID of National Diet Library
030175090
Material type
図書
Author
Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.
Publisher
Springer
Publication date
[2020]
Material Format
Paper
Capacity, size, etc.
xiv, 425 pages ; 25 cm.
NDC
-
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Notes on use

Note (General):

"ISSN 1437-0859 (electronic)"--title page verso.

Other physical details:

illustrations (black and white)

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Paper

Material Type
図書
ISBN
9789811512117 hardback
9811512116
ISBN (error code)
9789811512124 ebook
ISSN (series)
0303-4216
Author/Editor
Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors.
Edition
Second edition.
Author Heading
Publication, Distribution, etc.