Comprehensive nano-scale analysis to achieve high removal rate of 4H-SiC polishing by experimentally visualizing their polishing phenomena

Comprehensive nano-scale analysis to achieve high removal rate of 4H-SiC polishing by experimentally visualizing their polishing phenomena = 研磨現象可視化によるSiC基板の研磨加工レートとその要因解析

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Material Type: 図書
Title: Comprehensive nano-scale analysis to achieve high removal rate of 4H-SiC polishing by experimentally visualizing their polishing phenomena
Title Transcription: Comprehensive nano-scale analysis to achieve high removal rate of 4H-SiC polishing by experimentally visualizing their polishing phenomena
Publication, Distribution, etc.: 東京 : 工作機械技術振興財団 (出版)
Publication Date: 2021.8
Publication Date (W3CDTF): 2021
Extent: 25 p
Size: 30 cm
Alternative Title: 研磨現象可視化によるSiC基板の研磨加工レートとその要因解析ケンマゲンショウカシカニヨル SiC キバンノケンマカコウレートトソノヨウインカイセキ
Place of Publication (Country Code): JP
Text Language Code: eng
Content Type: テキスト
Media Type: 機器不用
Carrier Type: 冊子
NDLC: M19
Target Audience: 一般
Note (Bibliography): 文献あり
Price: 非売品
Holding library: 国立国会図書館
Call No.: M19-D114
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 032126120
http://id.ndl.go.jp/bib/032126120
National Bibliography No. (JPNO): 23713122
Cataloging Rule: Nippon Cataloging Rules 2018 Edition
Bibliographic Record Category (NDL): 117