博士論文
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Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction

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Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction

Persistent ID (NDL)
info:ndljp/pid/10122229
Material type
博士論文
Author
Awano, Hiromitsu
Publisher
京都大学 (Kyoto University)
Publication date
2016-03-23
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
京都大学,博士(情報学),Doctor of Informatics
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Digital

Material Type
博士論文
Author/Editor
Awano, Hiromitsu
Author Heading
Publication, Distribution, etc.
Publication Date
2016-03-23
Publication Date (W3CDTF)
2016-03-23
Alternative Title
トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ
Contributor
佐藤, 高史
小野寺, 秀俊
髙木, 直史
Degree grantor/type
京都大学