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博士論文

Design, Growth, and Characterization of InGaAs/GaAsP Superlattice for High Efficiency Ge-based Multi-junction Solar Cells

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DOI[info:doi/10.15083/00008223]to the data of the same series

Design, Growth, and Characterization of InGaAs/GaAsP Superlattice for High Efficiency Ge-based Multi-junction Solar Cells

Persistent ID (NDL)
info:ndljp/pid/10192121
Material type
博士論文
Author
藤井, 宏昌
Publisher
-
Date granted
2015-03-24
Material Format
Digital
Capacity, size, etc.
-
Degree grantor and degree
University of Tokyo(東京大学),博士(工学)
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学位の種別: 課程博士審査委員会委員 : (主査)東京大学准教授 杉山 正和, 東京大学教授 中野 義昭, 東京大学教授 平川 一彦, 東京大学教授 田中 雅明, 東京大学准教授 種村 拓夫, 東京大学教授 近藤 高志

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Digital

Material Type
博士論文
Title
Design, Growth, and Characterization of InGaAs/GaAsP Superlattice for High Efficiency Ge-based Multi-junction Solar Cells
Author/Editor
藤井, 宏昌
Publication Date
2015-03-24
Publication Date (W3CDTF)
2015-03-24
Alternative Title
高効率Geベース多接合太陽電池に向けたInGaAs/GaAsP超格子の設計・評価および結晶成長に関する研究
Degree Grantor
University of Tokyo(東京大学)
Date Granted
2015-03-24
Date Granted (W3CDTF)
2015-03-24
Dissertation Number
甲第31482号