Alternative Title単結晶NiO薄膜用有機金属気相成長法の開発と結晶評価に関する研究
Note (General)The development of nickel oxide (NiO) has drawn interests for a wide range of applications, including diode ultraviolet (UV) detectors, UV light emitting devices, biosensors, and thermoelectric device. Recently, it has also been used in the development of transparent conducting oxide (TCO) and resistive random access memory (ReRAM). In order to achieve a functional NiO, a growth technique for high quality NiO film is required. Furthermore, it is also important to achieve control of the carrier transport and conductivity of NiO. In this study, growth of high quality NiO has been established by metal organic vapor phase epitaxy (MOVPE). Doping of NiO has been carried out in an effort to control the carrier transport and conductivity of the films. Cobalt and iron have been used separately to dope NiO and the effects on the materials properties, including the transparency and conductivity have been investigated. NiO has been grown by a horizontal-reactor MOVPE at atmospheric pressure. The correlation between the growth parameters, structure of materials, and properties has been investigated by modifying the growth parameters, including the precursor ratio (O2/Ni), type of substrate, and growth temperature. The reactor has been modified accordingly in order to reduce gas phase reaction because of the use of O2 and to improve the deposition coverage. Optimization of the growth parameters has allowed the growth of single crystalline NiO film. Doping of NiO by cobalt and iron has been investigated independently. The growth, optical and electrical properties of the film were affected by dopant incorporation. Defect-controlled carrier generation in NiO has been used to explain the difference in film resistivity upon doping by considering the role of heterovalent Co3+ and Fe3+ ions. The demonstrated capability of growing a high quality NiO film by MOVPE and attempts to elucidate understanding of doping mechanism and conductivity in NiO in this study should serve as an important base for further development of NiO material and related applications.
2016
Collection (particular)国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
Date Accepted (W3CDTF)2016-11-02T12:02:18+09:00
Data Provider (Database)国立国会図書館 : 国立国会図書館デジタルコレクション