博士論文

Reaction Pathway Analysis for the Mobility of Partial Dislocation in 3C-SiC and Shuffle-set Perfect Dislocation in Silicon

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Reaction Pathway Analysis for the Mobility of Partial Dislocation in 3C-SiC and Shuffle-set Perfect Dislocation in Silicon

Persistent ID (NDL)
info:ndljp/pid/10982296
Material type
博士論文
Author
楊, 晶
Publisher
-
Publication date
2016-03-24
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
University of Tokyo(東京大学),博士(工学)
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学位の種別: 課程博士審査委員会委員 : （主査）東京大学教授 泉 聡志, 東京大学特任教授 酒井 信介, 東京大学教授 吉川 暢宏, 東京大学准教授 澁田 靖, 千葉工業大学准教授 原 祥太郎

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Digital

Material Type
博士論文
Title
Reaction Pathway Analysis for the Mobility of Partial Dislocation in 3C-SiC and Shuffle-set Perfect Dislocation in Silicon
Author/Editor
楊, 晶
Publication Date
2016-03-24
Publication Date (W3CDTF)
2016-03-24
Alternative Title
3C-SiCの部分転位とシリコンのシャフルセット完全転位の移動度に関する反応経路解析
Degree grantor/type
University of Tokyo(東京大学)
Date Granted
2016-03-24
Date Granted (W3CDTF)
2016-03-24
Dissertation Number
甲第32496号