博士論文

Growth of High Quality Three Dimensional Topological Insulator Bi2-xSbxTe3-ySey Thin Film by Physical Vapor Deposition and Fabrication of Topological p - n Junction

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Growth of High Quality Three Dimensional Topological Insulator Bi2-xSbxTe3-ySey Thin Film by Physical Vapor Deposition and Fabrication of Topological p - n Junction

Persistent ID (NDL)
info:ndljp/pid/11050435
Material type
博士論文
Author
Tu, Ngoc Han
Publisher
-
Publication date
2016-09-26
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
Tohoku University,博士（理学）
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type:博士学位論文 (Thesis(doctor))課程

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Digital

Material Type
博士論文
Title
Growth of High Quality Three Dimensional Topological Insulator Bi2-xSbxTe3-ySey Thin Film by Physical Vapor Deposition and Fabrication of Topological p - n Junction
Author/Editor
Tu, Ngoc Han
Author Heading
Tu, Ngoc Han
Publication Date
2016-09-26
Publication Date (W3CDTF)
2016-09-26
Alternative Title
物理気相成長を用いた高品質3次元トポロジカル絶縁体Bi2-xSbxTe3-ySey薄膜の育成とトポロジカルp-n接合の作製
Contributor
大串研也
Degree grantor/type
Tohoku University
Date Granted
2016-09-26