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博士論文

Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer

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Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer

Persistent ID (NDL)
info:ndljp/pid/11288300
Material type
博士論文
Author
蒲, 涛飞
Publisher
-
Publication date
2019-03-06
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
徳島大学,博士（工学）
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Digital

Material Type
博士論文
Title
Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer
Author/Editor
蒲, 涛飞
Author Heading
蒲, 涛飞
Publication Date
2019-03-06
Publication Date (W3CDTF)
2019-03-06
Alternative Title
P-GaNキャップ層を有するノーマリオフ型AlGaN/GaNヘテロ構造電界効果トランジスタに関する研究
Degree grantor/type
徳島大学
Date Granted
2019-03-06
Date Granted (W3CDTF)
2019-03-06