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博士論文

Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack

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Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack

Persistent ID (NDL)
info:ndljp/pid/11400999
Material type
博士論文
Author
山口, 晋平ほか
Publisher
-
Publication date
2018-09
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京工業大学,博士(工学)
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identifier:oai:t2r2.star.titech.ac.jp:50420244

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Provided by：国立国会図書館デジタルコレクションLink to Help Page

  • 2021-05-17 再収集

  • 2023-12-07 再収集

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Digital

Material Type
博士論文
Title
Threshold voltage control technology in metal/high-k pFET consisting of high germanium content SiGe channel and fixed charge/oxygen vacancy control in gate stack
Author/Editor
山口, 晋平
Yamaguchi, Shimpei
Author Heading
山口, 晋平
Yamaguchi, Shimpei
Publication Date
2018-09
Publication Date (W3CDTF)
2018-09
Degree grantor/type
東京工業大学
Date Granted
2018-09-20
Date Granted (W3CDTF)
2018-09-20
Dissertation Number
甲第10986号