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横磁場印加チョクラルスキー法を用いた結晶径300 mm シリコン単結晶成長プロセスにおける熱・物質輸送現象の解明
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国立国会図書館デジタルコレクション
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DOI[10.15017/2534423]to the data of the same series
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2023-09-05 再収集
2023-09-05 再収集
2023-09-05 再収集
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- Material Type
- 博士論文
- Author/Editor
- 横山, 竜介
- Author Heading
- Publication Date
- 2019-09-25
- Publication Date (W3CDTF)
- 2019-09-25
- Contributor
- 柿本, 浩一山崎, 伸彦西澤, 伸一中島, 寛
- Degree grantor/type
- 九州大学
- Date Granted
- 2019-09-25
- Date Granted (W3CDTF)
- 2019-09-25