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博士論文

Study on Transient Phenomenon of Magnetic Tunnel Junction with Perpendicular Anisotropy and Array Design for High Density and High Speed Operation STT-MRAM

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Study on Transient Phenomenon of Magnetic Tunnel Junction with Perpendicular Anisotropy and Array Design for High Density and High Speed Operation STT-MRAM

Persistent ID (NDL)
info:ndljp/pid/11512437
Material type
博士論文
Author
OHUCHIDA, SATOSHI
Publisher
-
Publication date
2018-03-27
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
Tohoku University,博士（工学）
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type:博士学位論文 (Thesis(doctor))課程

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Provided by：国立国会図書館デジタルコレクションLink to Help Page

  • 2023-09-08 再収集

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Digital

Material Type
博士論文
Title
Study on Transient Phenomenon of Magnetic Tunnel Junction with Perpendicular Anisotropy and Array Design for High Density and High Speed Operation STT-MRAM
Author/Editor
OHUCHIDA, SATOSHI
Author Heading
OHUCHIDA, SATOSHI
Publication Date
2018-03-27
Publication Date (W3CDTF)
2018-03-27
Alternative Title
高密度・高速動作可能なSTT-MRAMへ向けたp-MTJのスイッチング過渡現象とアレイ設計指針に関する研究
Contributor
遠藤哲郎
Degree grantor/type
Tohoku University
Date Granted
2018-03-27