Research on Interface State and Reliability of 4H-SiC MOSFETs with Thermal Gate Oxide

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Research on Interface State and Reliability of 4H-SiC MOSFETs with Thermal Gate Oxide

Persistent ID (NDL): info:ndljp/pid/11570142

Material type: 博士論文

Author: 許, 恒宇

Publisher: -

Publication date: 2020-09-23

Material Format: Digital

Capacity, size, etc.: -

Name of awarding university/degree: 徳島大学,博士（工学）

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Material Type: 博士論文
Title: Research on Interface State and Reliability of 4H-SiC MOSFETs with Thermal Gate Oxide
Author/Editor: 許, 恒宇
Author Heading: 許, 恒宇
Publication Date: 2020-09-23
Publication Date (W3CDTF): 2020-09-23
Alternative Title: 4H炭化ケイ素MOSFETゲート酸化膜の界面準位及び信頼性に関する研究
Degree grantor/type: 徳島大学
Date Granted: 2020-09-23
Date Granted (W3CDTF): 2020-09-23
Dissertation Number: 甲第3448号
Degree Type: 博士（工学）
Conferring No. (Dissertation): 甲第3448号
Text Language Code: eng
Subject Heading: Silicon carbide
MOSFET
Interface State
Reliability
Thermal Gate Oxide
Target Audience: 一般
Persistent ID (NDL): info:ndljp/pid/11570142
https://dl.ndl.go.jp/pid/11570142
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
https://dl.ndl.go.jp/collections/A00014
Acquisition Basis: 博士論文（自動収集）
Date Accepted (W3CDTF): 2020-11-10T19:58:22+09:00
Format (IMT): application/pdf
Access Restrictions: 国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service: 図書館・個人送信対象外
Availability of remote photoduplication service: 可
Periodical Title (URI): http://repo.lib.tokushima-u.ac.jp/115310
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp