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博士論文

Study on defect characterization of Ge gate stacks using deep-level transient spectroscopy

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Study on defect characterization of Ge gate stacks using deep-level transient spectroscopy

Persistent ID (NDL)
info:ndljp/pid/11634449
Material type
博士論文
Author
温, 偉辰
Publisher
-
Date granted
2020-09-25
Material Format
Digital
Capacity, size, etc.
-
Degree grantor and degree
九州大学,博士（工学）
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Digital

Material Type
博士論文
Title
Study on defect characterization of Ge gate stacks using deep-level transient spectroscopy
Author/Editor
温, 偉辰
Publication Date
2020-09-25
Publication Date (W3CDTF)
2020-09-25
Alternative Title
DLTS法を用いたGeゲートスタックの欠陥評価に関する研究
Contributor
服部, 励治
中島, 寛
佐道, 泰造
王, 冬
Degree Grantor
九州大学
Date Granted
2020-09-25
Date Granted (W3CDTF)
2020-09-25