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博士論文

Study on Defects in SiC MOS Structures and Mobility-Limiting Factors of MOSFETs

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Study on Defects in SiC MOS Structures and Mobility-Limiting Factors of MOSFETs

Persistent ID (NDL)
info:ndljp/pid/11673961
Material type
博士論文
Author
Kobayashi, Takuma
Publisher
-
Publication date
2018-03-26
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
京都大学,博士(工学),Doctor of Philosophy (Engineering)
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Notes on use

Note (General):

元資料の権利情報 : 許諾条件により本文は2019-03-01に公開→学位規則第9条第2項により要約公開に切り替え(2019/02/07)→許諾条件により本文は2021-03-01に公開(2020/07/31)元資料の権利情報 : 許諾条件により要約は2019-03-01に公開

Table of Contents

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  • 2023-09-05 再収集

  • 2023-09-05 再収集

  • 2023-09-05 再収集

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  • Kyoto University Research Information Repository

    Digital
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Digital

Material Type
博士論文
Author/Editor
Kobayashi, Takuma
Author Heading
Publication Date
2018-03-26
Publication Date (W3CDTF)
2018-03-26
Alternative Title
SiC MOS構造における欠陥およびMOSFETの移動度支配要因に関する研究
Contributor
木本, 恒暢
藤田, 静雄
白石, 誠司
Degree grantor/type
京都大学
Date Granted
2018-03-26